FDMS86500L
Manufacturer:
On Semiconductor
Mfr.Part #:
FDMS86500L
Datasheet:
Description:
MOSFETs Power-56-8 SMD/SMT N-Channel number of channels:1 2.5 W 60 V Continuous Drain Current (ID):25 A 165 nC
| Parameter | Value |
|---|---|
| Length | 5 mm |
| Width | 6 mm |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 8 |
| Resistance | 2.5 mΩ |
| Height | 1.05 mm |
| Packaging | Reel |
| Lead Free | Lead Free |
| RoHS | Compliant |
| REACH SVHC | No SVHC |
| Weight | 0.0681 g |
| Contact Plating | Tin |
| Number of Elements | 1 |
| Lifecycle Status | Production (Last Updated: 10 months ago) |
| Max Power Dissipation | 104 W |
| Power Dissipation | 2.5 W |
| Threshold Voltage | 1.8 V |
| Number of Channels | 1 |
| Input capacitance | 12.53 nF |
| Continuous Drain Current (ID) | 25 A |
| Rds On Max | 2.5 mΩ |
| Drain to Source Voltage (Vdss) | 60 V |
| FET Type(Transistor Polarity) | N-Channel |
| Turn-On Delay Time | 27 ns |
| Turn-Off Delay Time | 63 ns |
| Element Configuration | Single |
| Fall Time | 7.8 ns |
| Rise Time | 16 ns |
| Gate Charge | 165 nC |
| Drain to Source Resistance | 2.1 mΩ |
| Max Junction Temperature (Tj) | 150 °C |
| Nominal Vgs | 1.8 V |
| Gate to Source Voltage (Vgs) | 20 V |
| Drain to Source Breakdown Voltage (Vds) | 60 V |
| Schedule B | 8541290080 |
| Manufacturer Lifecycle Status | ACTIVE (Last Updated: 10 months ago) |
| Gate to Source Threshold Voltage | 1 V |
| Drain to Source Breakdown Voltage | 60 V |
Stock: 19
Distributors
pcbx
pcbxUnit Price$1.26816
Ext.Price$1.26816
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $1.26816 | $1.26816 |
| 10 | $1.06550 | $10.65500 |
| 25 | $0.95371 | $23.84275 |
| 50 | $0.85365 | $42.68250 |
| 100 | $0.76407 | $76.40700 |
| 300 | $0.73510 | $220.53000 |
| 500 | $0.70723 | $353.61500 |
| 1000 | $0.68181 | $681.81000 |